Capable of handling up to 6-inch wafers by incorporating wafer rotary stage

※8-inch wafer handling capability (1 wafer stage) scheduled to be developed

Equipped with Two wafer stages with temperature up/down control function,

 reducing wafer changeover time and increasing productivity

Capable of stable 45 μm pad pitch bonding with low vibration, 

high-speed drive using Shinkawa NRS technology

Automatic free air ball monitor function (FAM) measuring free air ball size

Multiple choices for surface contact detection at bonding, with "Force detection mode" to detect change 

in force in real time as well as conventional "Positional detection mode," enabling stable bonding quality

Model

SBB-5200

Bonding Accuracy

±2.5 μm（3σ）Using Shinkawa standard device

Correction of Bonding Position

System to check and correct capillary offset prior to bonding through Shinkawa RPS

Bonding Speed

30 ms/ bump (without reverse)  Using Shinkawa standard device

Bonding Wire Length

8 mm maximum (Varies depending on device conditions)

Resolution

XY-table: 0.1 μm  Z-axis: 0.1 μm

Vibration Control

Shinkawa NRS - Non Reaction Servo System

Bonding Area

Maximum φ150 mm (6-inch wafer)

Wire Size

Au　φ15–32 μm

30,000 bumps maximum

Size：Maximum 6 inches 

(Conversion parts are required when wafer size changes.)

Thickness：0.15–0.6 mm

(Conversion parts may be required when wafer thickness changes.)

Options Available

Automatic wafer loader for 6-inch wafer (Under development)

Utilities

Input Power Supply：Single Phase 100 VAC (±5% input variation)　 

50/60Hz (other voltage requires transformer)

Power Consumption：Approx. 1.1kVA

CDA：500kPa (5 kgf/cm2) 100L/min

Vacuum：-74kPa or below (-550 mmHg) (gauge)

Physical Dimensions and Mass

1,000W × 1,088D × 2,087H mm  Approx.500 kg